| Abstract– A novel detecting device compatible with modified
CMOS processes was studied using standard simulation codes.
The physical principle of the device derives from the properties
of a buried gate containing deep trapping centers. This gate,
which modulates the drain-source current of the n or p MOS
transistor selectively traps carriers generated by an impinging
particle. This principle evaluated with realistic simulations
parameters shows that a good signal to noise ratio might be
obtained for an energy deposition equivalent to a minimum
ionizing particle within a limited silicon thickness. Problems
related to the physical implementation process for such a device
are also discussed.
I. |
