Résumé du preprint Irfu-11-59

A Novel CMOS Detector Based on a Deep Trapping Gate
N. T. Fourches
Abstract A novel detecting device compatible with modified CMOS processes was studied using standard simulation codes. The physical principle of the device derives from the properties of a buried gate containing deep trapping centers. This gate, which modulates the drain-source current of the n or p MOS transistor selectively traps carriers generated by an impinging particle. This principle evaluated with realistic simulations parameters shows that a good signal to noise ratio might be obtained for an energy deposition equivalent to a minimum ionizing particle within a limited silicon thickness. Problems related to the physical implementation process for such a device are also discussed. I.